Hitachi 2SD1559
Silicon NPN Transistor
| Part No. | 2SD1559 |
|---|---|
| Datasheet | 2SD1559 Download |
| Manufacturer |  Hitachi |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Base current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) IB PC * Tj Tstg 1 Ratings 100 100 7 20 30 3 100 150 –55 to +150 Unit V V V A A A W °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 100 100 100 7 — — 1000 — — — — — — — Typ — — — — — — — — — — — 1.0 9.0 3.0 Max — — — — 100 1.0 20000 2.0 2.5 3.0 3.5 — — — V V V V µs µs µs I C = 10 A, IB1 = –IB2 = 20 mA I C = 20 A, IB = 200 mA*1 Unit V V V V µA mA Test conditions I C = 0.1 mA, IE = 0 I C = 25 mA, RBE = ∞ I C = 200 mA, RBE = ∞*1 VEB = 50 mA, IC = 0 VCB = 100 V, IE = 0 VCE = 80 V, RBE = ∞ VCE = 3 V, IC = 10 A*1 I C = 10 A, IB = 20 mA*1 Collector to emitter breakdown V(BR)CEO voltage Collector to emitter sustain voltage Emitter to b...
