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2SD1609 Datasheet PDF

Hitachi 2SD1609

The 2SD1609 and 2SD1610 are grouped by h FE1 as follows.
Part No. 2SD1609
Datasheet 2SD1609 Download
Manufacturer
Hitachi
Description Silicon NPN Transistor
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2SD1609 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SD1609 160 160 5 100 1.25 150 –45 to +150 2SD1610 200 200 5 100 1.25 150 –45 to +150 Unit V V V mA W °C °C 2SD1609, 2SD1610

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) 2SD1609 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO 1 2SD1610 Max — — — 10 — 320 — 1.5 2 — — Min 200 200 5 — — 60 30 — — — — Typ — — — — — — — — — 140 3.8 Max — — — — 10 320 — 1.5 2 — — V V MHz pF Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 140 V, IE = 0 VCB = 160 V, IE = 0 VCE = 5 V, IC = 10 mA VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 10 mA I C = 30 mA, IB = 3 mA VCE = 5 V, IC = 10 mA VCB = 10 V,...
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