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2SD2102 Datasheet PDF

Hitachi 2SD2102

Silicon NPN Triple Diffused Transistor

Part No. 2SD2102
Datasheet 2SD2102 Download
Manufacturer
Hitachi
Description Silicon NPN Triple Diffused Transistor
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2SD2102 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC IC(peak) PC PC*1 Tj Tstg Rating 60 60 7 4 8 2 25 150 –55 to +150 Unit V V V A A W °C °C

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Symbol Min Typ Collector to base breakdown V(BR)CBO 60 — voltage Collector to emitter breakdown V(BR)CEO 60 — voltage Emitter to base breakdown V(BR)EBO 7 — voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Note: 1. Pulse test. ICBO ICEO hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 — — — — 1000 — — — — — — — — — Max — Unit V Test conditions IC = 0.1 mA, IE = 0 — V IC = 25 mA, RBE = ∞ — V IE = 50 mA, IC = 0 10 µA 10 20000 1.5 V 3.0 2.0 V 3.5 VCB = 50 V, IE = 0 VCE = 50 V, RBE = ∞ VCE = 3 V, IC = 2 A*1 IC = 2 A, IB = 4 mA*1 IC = 4 A, IB = 40 mA*1 IC = 2 A, IB = 4 mA*1 IC = 4 A, IB = 40 mA*1 See switching characteristic curve of 2SD1558.
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