2SD2102 Datasheet PDF

DESCRIPTION

●Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min)
●High DC Current Gain : hFE= 1000(Min) @ IC= 2A, VCE= 3V

APPLICATIONS

●Designed for low frequency power amplifier applications

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 4A ICM Base Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8A 2 W 25 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD2102

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-E