Hitachi 2SD667
Silicon NPN Transistor
| Part No. | 2SD667 |
|---|---|
| Datasheet | 2SD667 Download |
| Manufacturer |  Hitachi |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg 2SD667 120 80 5 1 2 0.9 150 –55 to +150 2SD667A 120 100 5 1 2 0.9 150 –50 to +150 (Ta = 25°C) Unit V V V A A W °C °C Rev.2.00 Aug 10, 2005 page 1 of 5 2SD667, 2SD667AELECTRICAL CHARACTERISTICS
Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE1*1 2SD667 Min Typ Max 1
