ABSOLUTE MAXIMUM RATINGS
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg 2SD667 120 80 5 1 2 0.9 150 –55 to +150 2SD667A 120 100 5 1 2 0.9 150 –50 to +150 (Ta = 25°C) Unit V V V A A W °C °C Rev.2.00 Aug 10, 2005 page 1 of 5 2SD667, 2SD667A ELECTRICAL CHARACTERISTICS
Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE1*1 2SD667 Min Typ Max 120 — — 80 — — 5 —— — — 10 60 — 320 2SD667A Min Typ Max 120 — — 100 — — 5 —— — — 10 60 — 200 hFE2 30 — — 30 — — Collector to emitter saturation voltage VCE(sat) — — 1 —— 1 Base to emitter voltage VBE — — 1.5 — — 1.5 Gain bandwidth product fT — 140 — — 140 — Collector output Cob — 12 — — capacitance Notes: 1. 2.
Renesas Electronics
