Hitachi 2SD970
Silicon NPN Transistor
| Part No. | 2SD970 |
|---|---|
| Datasheet | 2SD970 Download |
| Manufacturer |  Hitachi |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg 1 Ratings 120 120 7 8 12 40 150 –55 to +150 Unit V V V A A W °C °C 2SD970(K)ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min 120 7 — — 1000 — — — — — — — Typ — — — — — — — — — 0.4 5.4 1.1 Max — — 100 10 20000 1.5 3.0 2.0 3.5 — — — V V V V µs µs µs Unit V V µA µA Test conditions I C = 25 mA, RBE = ∞ I E = 50 mA, IC = 0 VCB = 120 V, IE = 0 VCE = 100 V, RBE = ∞ VCE = 3 V, IC = 4 A*1 I C = 4 A, IB = 8 mA*1 I C = 8 A, IB = 80 mA*1 I C = 4 A, IB = 8 mA*1 I C = 8 A, IB = 80 mA*1 I C = 4 A, IB1 = –IB2 = 8 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Storage time Fall time Note: 1.
