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2SD970 - NPN Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) High DC Current Gain : hFE= 1000(Min) @IC= 4A Low Saturation Voltage Complement to Type 2SB791 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium

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isc Silicon NPN Darlington Power Transistor 2SD970 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 4A ·Low Saturation Voltage ·Complement to Type 2SB791 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium speed and power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICP Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 12 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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