Datasheet Details
| Part number | 2SD970 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.55 KB |
| Description | NPN Transistor |
| Download | 2SD970 Download (PDF) |
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Overview: isc Silicon NPN Darlington Power Transistor 2SD970.
| Part number | 2SD970 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.55 KB |
| Description | NPN Transistor |
| Download | 2SD970 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 4A ·Low Saturation Voltage ·Complement to Type 2SB791 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium speed and power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICP Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 12 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD970 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA;
RBE= ∞ 120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD970 | Silicon NPN Transistor | Hitachi Semiconductor |
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2SD970 | SILICON POWER TRANSISTOR | SavantIC |
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2SD970K | Silicon NPN Transistor | Hitachi Semiconductor |
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