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2SD970 - NPN Transistor

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Part number 2SD970
Manufacturer INCHANGE
File Size 206.55 KB
Description NPN Transistor
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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) High DC Current Gain : hFE= 1000(Min) @IC= 4A Low Saturation Voltage Complement to Type 2SB791 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium speed and power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-B

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