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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD972
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 50V(Min) ·High DC Current Gain ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for hammer drivers, audio amplifiers applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
50
V
VCEO Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
4
A
ICP
Collector Current-Peak
6
A
IB
Base Current
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
0.2
A
30
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website：www.
2SD972 Datasheet
