Datasheet Details
| Part number | 2SD971 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.38 KB |
| Description | NPN Transistor |
| Download | 2SD971 Download (PDF) |
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Overview: INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor.
| Part number | 2SD971 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.38 KB |
| Description | NPN Transistor |
| Download | 2SD971 Download (PDF) |
|
|
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·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 300V(Min) ·High DC Current Gain ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for applications such as electronic ignition, DC and AC motor controls, solenoid drivers,etc.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A ICP Collector Current-Peak 10 A IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 1 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD971 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A;
IB= 50mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A;
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