2SD971 Overview
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 300V(Min) ·High DC Current Gain ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for applications such as electronic ignition, DC and AC motor controls, solenoid drivers,etc. 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN...