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2SD974 Datasheet PDF

Hitachi 2SD974

Silicon NPN Transistor

Part No. 2SD974
Datasheet 2SD974 Download
Manufacturer
Hitachi
Description Silicon NPN Transistor
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2SD974 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Surge collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) I C(surge) PC Tj Tstg Ratings 120 60 5 1 1.5 4 0.9 150 –55 to +150 Unit V V V A A A W °C °C

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 120 60 5 — 150 — — — Typ — — — — — — — 0.4 Max — — — 1.0 — 0.3 1.2 — V MHz pF I CP = 1 A, IB1 = –IB2 = 50 mA*1 Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 100 V, IE = 0 VCE = 5 V, IC = 1 A*1 I C = 1 A, IB = 0.05 A*1 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Fall time Note: 1. Pulse test V(BR)EBO I CB...
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