Renesas Electronics 2SD974
Silicon NPN Epitaxial Transistor
| Part No. | 2SD974 |
|---|---|
| Datasheet | 2SD974 Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon NPN Epitaxial Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Surge collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) IC(surge) PC Tj Tstg Ratings 120 60 5 1 1.5 4 0.9 150 –55 to +150 Unit V V V A A A W °C °C Rev.3.00 Oct 06, 2006 page 1 of 5 2SD974ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE VCE(sat) VBE(sat) tf Min 120 60 5 — 150 — — — Typ — — — — — — — 0.4 Max — — — 1.0 — 0.3 1.2 — Unit V V V µA V V pF Test conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 VCB = 100 V, IE = 0 VCE = 5 V, IC = 1 A*1 IC = 1 A, IB = 0.05 A*1 ICP = 1 A, IB1 = –IB2 = 50 mA*1 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Fall time Note: 1.
