Hitachi 2SJ248
P-Channel MOSFET
| Part No. | 2SJ248 |
|---|---|
| Datasheet | 2SJ248 Download |
| Manufacturer |  Hitachi |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
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● Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline TO-220FM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SJ248
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings –100 ±20 –8 –32 –8 25 150 –55 to +150 Unit V V A A A W °C °C 2 2SJ248ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS –100 ±20 — — –1.0 — — |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 3.0 — — — — — — — — — Typ — — — — — 0.25 0.3 5.5 880 325 80 12 47 150 75 –1.0 170 Max — — ±10...
