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2SJ321 Datasheet PDF

Hitachi 2SJ321

Silicon P Channel MOS FET

Part No. 2SJ321
Datasheet 2SJ321 Download
Manufacturer
Hitachi
Description Silicon P Channel MOS FET
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2SJ321 datasheet page 1 preview

FEATURES

● Low on-resistance
● High speed switching
● Low drive current
● 4 V gate drive device can be driven from 5 V source
● Suitable for switching regulator, DC-DC converter
● Avalanche ratings Outline TO-220CFM D 12 3 1. Gate G 2. Drain 3. Source S November 1996 2SJ321

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I *1 D(pulse) IDR IAP*3 EAR*3 Pch*2 Tch Tstg Ratings –60 ±20 –15 –60 –15 –15 19 30 150 –55 to +150 Unit V V A A A A mJ W °C °C 2 2SJ321

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Symbol Min Drain to source breakdown voltage V
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