2SJ450 Datasheet PDF

FEATURES

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● Low on-resistance. Low drive power High speed switching 2.5 V gate drive device. Outline UPAK 2 1 4 D 1. Gate 2. Drain 3. Source 4. Drain S 3 G 2SJ450

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Drain peak current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings –60 ±20 –1 –2 –1 1 150 –55 to +150 Unit V V A A A W °C °C Notes: 1. PW ≤ 100 µs, duty cycle ≤ 10% 2. When using aluminium ceramic board (12.5 × 20 × 70 mm) 2 2SJ450

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Symbol V(BR)DSS V(BR)GSS Min –60 ±20 — — –0.5 — — 0.6 — — — — — — — — — Typ — — — — — 0.85 1.1 1.0 150 72 24 6 9 50 35 –0.9 100 Max — — –50 ±10 –1.5 1.2 1.9 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = –1 A, VGS = 0 I F = –1 A, VGS = 0 diF/dt = 50A/µs Test condi...