2SJ452 Datasheet PDF

FEATURES

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● Low on-resistance. Low drive power 2.5 V gate drive device. Small package (MPAK). Outline MPAK 3 1 2 D 1. Source 2. Gate 3. Drain G S 2SJ452

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% Marking is "ZM–". Symbol VDSS VGSS ID I D(pulse)* Pch Tch Tstg 1 Ratings –50 ±20 –0.2 –0.4 150 150 –55 to +150 Unit V V A A mW °C °C

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Symbol V(BR)DSS V(BR)GSS Min –50 ±20 — — –0.5 — — 0.1 — — — — — — — Typ — — — — — 5.0 7.5 0.19 1.1 15.7 0.12 0.45 1.3 8.4 5.6 Max — — –1.0 ±2.0 –1.5 7.0 12.0 — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF µs µs µs µs Test conditions I D = –100 µA, VGS = 0 I G = ±100 µA, VDS = 0 VDS = –40 V, VGS = 0 VGS = ±16 V, VDS = 0 I D = –10 µA, VDS = –5 V I D = –100 mA VGS = –4 V*1 I D =...