Hitachi 2SJ543
Silicon P-Channel MOSFET
| Part No. | 2SJ543 |
|---|---|
| Datasheet | 2SJ543 Download |
| Manufacturer |  Hitachi |
| Description | Silicon P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance R DS(on) = 0.042 Ω typ.● Low drive current.
● 4V gate drive devices.
● High speed switching. Outline TO–220AB D G 1 2 S 3 1. Gate 2. Drain (Flange) 3. Source 2SJ543
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings –60 ±20 –20 –80 –20 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2 –20 34 75 150 –55 to +150 EAR Pch Tch Tstg 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25° C 3. Value at Tch = 25° C, Rg ≥ 50 ΩELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min –60 ±20 — — –1.0 — — 10 — — — — — — — — — Typ — — — — — 0.042 0.065 16 1750 800 180 16 100 230 140 –1.0 100 Max — — –10 ±10 –2.0 0.055 0.095 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = –20A, VGS = 0 I F =...
