Hitachi 2SJ545
Silicon P-Channel MOSFET
| Part No. | 2SJ545 |
|---|---|
| Datasheet | 2SJ545 Download |
| Manufacturer |  Hitachi |
| Description | Silicon P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance R DS(on) = 0.11 Ω typ.● Low drive current
● 4 V gete drive devices
● High speed switching Outline TO–220CFM D G 1 2 S 3 1. Gate 2. Drain 3. Source 2SJ545
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings –60 ±20 –12 –48 –12 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current I DR Avalenche current Avalenche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2 –12 12 25 150 –55 to +150 EAR Pch Tch Tstg 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25° C 3. Value at Tch = 25° C, Rg ≥ 50 ΩELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min –60 ±20 — — –1.0 — — 5 — — — — — — — — — Typ — — — — — 0.11 0.16 8 580 300 85 10 55 85 60 –1.2 60 Max — — –10 ±10 –2.0 0.15 0.23 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = –12A, VGS = 0 I F = –12A, VGS = 0 diF/ dt...
