Hitachi 2SJ546
Silicon P-Channel MOSFET
| Part No. | 2SJ546 |
|---|---|
| Datasheet | 2SJ546 Download |
| Manufacturer |  Hitachi |
| Description | Silicon P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance R DS(on) = 0.075 Ω typ.● Low drive current.
● 4V gate drive devices.
● High speed switching. Outline TO–220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SJ546
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings –60 ±20 –15 –60 –15 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2 –15 19 30 150 –55 to +150 EAR Pch Tch Tstg 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25° C 3. Value at Tch = 25° C, Rg ≥ 50 ΩELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min –60 ±20 — — –1.0 — — 6.5 — — — — — — — — — Typ — — — — — 0.075 0.105 11 850 420 110 12 75 125 75 –1.1 70 Max — — –10 ±10 –2.0 0.095 0.155 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = –15A, VGS = 0 I F = –15A, VGS...
