Hitachi 2SJ554
Silicon P-Channel MOSFET
FEATURES
● Low on-resistance R DS(on) = 0.028 Ω typ.● Low drive current.
● 4V gate drive devices.
● High speed switching. Outline TO–3P D G 1 S 2 3 2SJ554
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings –60 ±20 –45 –180 –45 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2 –45 173 100 150 –55 to +150 EAR Pch Tch Tstg 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25° C 3. Value at Tch = 25° C, Rg ≥ 50 ΩELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min –60 ±20 — — –1.0 — — 18 — — — — — — — — — Typ — — — — — 0.028 0.038 30 2500 1300 300 25 160 350 240 –1.1 100 Max — — –10 ±10 –2.0 0.037 0.055 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = –45A, VGS = 0 I F = –45A, VGS = 0 diF/ dt =50A/µs Test...