Renesas Electronics 2SJ554
P-Channel MOSFET
DESCRIPTION
High speed power switchingFEATURES
● Low on-resistance RDS (on) = 0.028 Ω typ.● Low drive current.
● 4 V gate drive devices.
● High speed switching. Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 1 2 3 G D S REJ03G0901-0400 (Previous: ADE-208-628B) Rev.4.00 Sep 07, 2005 1. Gate 2. Drain (Flange) 3. Source Rev.4.00 Sep 07, 2005 page 1 of 7 2SJ554
ABSOLUTE MAXIMUM RATINGS
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID (pulse) Note 1 IDR IAP Note 3 EAR Note 3 Pch Note 2 Tch Tstg Value –60 ±20 –45 –180 –45 –45 173 100 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W °C °CELECTRICAL CHARACTERISTICS
Item Drain to source breakdown voltage Gate to source breakdown voltage Z...