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2SJ554 Datasheet PDF

Renesas Electronics 2SJ554

P-Channel MOSFET

Part No. 2SJ554
Datasheet 2SJ554 Download
Manufacturer
Renesas Electronics
Description P-Channel MOSFET
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2SJ554 datasheet page 1 preview

DESCRIPTION

High speed power switching

FEATURES

● Low on-resistance RDS (on) = 0.028 Ω typ.
● Low drive current.
● 4 V gate drive devices.
● High speed switching. Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 1 2 3 G D S REJ03G0901-0400 (Previous: ADE-208-628B) Rev.4.00 Sep 07, 2005 1. Gate 2. Drain (Flange) 3. Source Rev.4.00 Sep 07, 2005 page 1 of 7 2SJ554

ABSOLUTE MAXIMUM RATINGS

Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID (pulse) Note 1 IDR IAP Note 3 EAR Note 3 Pch Note 2 Tch Tstg Value –60 ±20 –45 –180 –45 –45 173 100 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W °C °C

ELECTRICAL CHARACTERISTICS

Item Drain to source breakdown voltage Gate to source breakdown voltage Z...
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