Hitachi 2SJ587
Silicon P Channel MOS FET High Speed Switching
| Part No. | 2SJ587 |
|---|---|
| Datasheet | 2SJ587 Download |
| Manufacturer |  Hitachi |
| Description | Silicon P Channel MOS FET High Speed Switching |
| Buy | Stock & Price |
FEATURES
● Low on-resistance R DS = 8.5 Ω typ. (VGS = -4 V , I D = -25 mA) R DS = 15 typ. (VGS = -2.5 V , ID = -10 mA)● 2.5 V gate drive device.
● Small package (SMPAK) Outline SMPAK 3 1 2 D 3 2 G 1. Source 2. Gate 3. Drain S 1 2SJ587
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note 2 Note1 Ratings -20 ±10 -50 -200 -50 100 150 –55 to +150 Unit V V mA mA mA mW °C °C 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value on the alumina ceramic board (12.5x 20 x0.7 mm)ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS V(BR)GSS I GSS I DSS Min -20 ±10 — — -0.8 — — 32.5 — — — — — — — Typ — — — — — 4.1 6.0 50 13 10 1.8 22 48 50 60 Max — — ±5 -...
