Hitachi 2SJ588
Silicon P Channel MOS FET High Speed Switching
| Part No. | 2SJ588 |
|---|---|
| Datasheet | 2SJ588 Download |
| Manufacturer |  Hitachi |
| Description | Silicon P Channel MOS FET High Speed Switching |
| Buy | Stock & Price |
FEATURES
● Low on-resistance R DS =2.8 Ω typ. (V GS = -10 V , I D = -50 mA) R DS =5.7 Ω typ. (V GS = -4 V , I D = -50 mA)● 4 V gate drive device. Outline SPAK D 3 12 3 2 G 1. Source 2. Drain 3. Gate S 1 2SJ588
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note1 Ratings -30 ±20 -100 -400 -100 300 150 –55 to +150 Unit V V mA mA mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS V(BR)GSS I GSS I DSS Min -30 ±20 — — -1.3 — — 68 — — — — — — — Typ — — — — — 2.8 5.7 105 25 20 8 10 15 40 45 Max — — ±5 -1 -2.3 3.3 7.9 — — — — — — — — Unit V V µA µA V Ω Ω mS pF pF pF ns ns ns ns Test Condition...
