Hitachi 2SK1337
Silicon N-Channel MOSFET
FEATURES
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● Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source
● Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-92 D G 32 1 1. Source 2. Drain 3. Gate S 2SK1337
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% Symbol VDSS VGSS ID I D(pulse)* I DR Pch Tch Tstg 1 Ratings 100 ±20 0.3 1.2 0.3 400 150 –55 to +150 Unit V V A A A mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS 100 ±20 — — 1.0 — — Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1.