2SK2569 Datasheet PDF

FEATURES

●
●
●
● Low on-resistance. R DS(on) = 2.6 max. (at V GS = 4 V, I D = 100mA) 2.5V gate drive device. Small package (MPAK). Outline MPAK 3 1 2 D 1. Source 2. Gate 3. Drain G S 2SK2569

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % Symbol VDSS VGSS ID I D(pulse)* Pch* Tch Tstg 2 1 Ratings 50 ±20 0.2 0.4 150 150 –55 to +150 Unit V V A A mW °C °C

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Symbol V(BR)DSS V(BR)GSS Min 50 ±20 — — 0.5 — — 0.13 — — — — — — — Typ — — — — — 2.0 3.1 0.23 14.0 17.2 1.73 40 86 1120 430 Max — — 1.0 ±2.0 1.5 2.6 5.0 — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF µs µs µs µs Test Conditions I D = 100 µA, VGS = 0 I G = ±100 µA, VDS = 0 VDS = 40 V, VGS = 0 VGS = ±16 V, VDS = 0 I D = 10 µA, VDS = 5 V I D = 100 mA VGS = 4 V*1...