2SK2570 Datasheet PDF

FEATURES

● Low on-resistance R DS(on) = 0. 8 Ω typ. (VGS = 4 V, I D = 100 mA)
● 2.5V gate drive devices.
● Small package (MPAK) Outline MPAK 3 1 2 D G 1. Source 2. Gate 3. Drain S 2SK2570

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % Symbol VDSS VGSS ID I D(pulse)* Pch Tch Tstg 1 Ratings 20 ±10 0.2 0.4 150 150 –55 to +150 Unit V V A A mW °C °C

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Symbol V(BR)DSS V(BR)GSS I DSS I GSS Min 20 ±10 — — 0.5 — Typ — — — — — 0.8 Max — — 1.0 ±5.0 1.5 1.1 Unit V V µA µA V Ω Ω S Test Conditions I D = 10µA, VGS = 0 I G = ±100µA, VDS = 0 VDS = 20 V, VGS = 0 VGS = ±6.5V, VDS = 0 I D = 10µA, VDS = 5V I D = 100 mA VGS = 4V *1 — 1.3 2.2 I D = 40 mA VGS = 2.5V *1 Forw...