2SK2570 - Silicon N Channel MOS FET

Renesas

Key Features

Low on-resistance RDS(on) = 0.8 Ω typ. (VGS = 4 V, ID = 100 mA).
2.5 V gate drive devices.
Small package (MPAK) Outline.

2SK2570 silicon n channel mos fet by Renesas - Datasheet Preview

Datasheet Details

Part number	2SK2570
Manufacturer	Renesas
File Size	81.96 KB
Description	Silicon N Channel MOS FET
Datasheet	2SK2570 Datasheet

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2SK2570 Silicon N Channel MOS FET Low Frequency Power Switching REJ03G1019-0200 (Previous: ADE-208-574) Rev.2.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 0.8 Ω typ. (VGS = 4 V, ID = 100 mA) • 2.5 V gate drive devices. • Small package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) D 3 1 2 G 1. Source 2. Gate 3. Drain S Note: Marking is “ZL–” Rev.2.00 Sep 07, 2005 page 1 of 6 2SK2570 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % Symbol VDSS VGSS ID ID(pulse)*1 Pch Tch Tstg Ratings 20 ±10 0.2 0.