The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Power F-MOS FETs
2SK2572
2SK2572(Tentative)
Silicon N-Channel Power F-MOS
s Features
q Avalanche Unit : mm
15.5±0.5 3.0±0.3
energy capability guaranteed
4.5
q High-speed q Low q No
switching
ø3.2±0.1
10.0
26.5±0.5
ON-resistance
5˚
5˚
2.0 1.2
secondary breakdown
4.0 2.0±0.2 1.1±0.1
2.0
q Non-contact q Solenoid q Motor
relay
18.6±0.5
s Applications
drive
5˚
5˚ 5˚
0.7±0.1
5.45±0.3
5.45±0.3
3.3±0.3 0.7±0.1
q Control
equipment mode regulator
5˚
q Switching
1
2
3
2.0
5.5±0.3
drive
s Absolute Maximum Ratings (Tc = 25˚C)
Parameter Drain-Source breakdown voltage Gate-Source voltage Drain current DC Pulse TC = 25˚C Ta= 25˚C Symbol VDSS VGSS ID IDP EAS * PD Tch Tstg Rating 500 ±20 ±15 ±30 11.
2SK2572 Datasheet
