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2SK291 Datasheet PDF

Hitachi 2SK291

The 2SK291 is grouped by I DSS as follows.
Part No. 2SK291
Datasheet 2SK291 Download
Manufacturer
Hitachi
Description Silicon N-Channel Junction FET
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2SK291 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Gate to drain voltage Gate to source voltage Drain current Gate current Channel power dissipation Channel temperature Storage temperature Symbol VGDO VGSO ID IG Pch Tch Tstg Ratings –15 –15 50 5 300 150 –55 to +150 Unit V V mA mA mW °C °C

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Gate to drain breakdown voltage Gate to source breakdown voltage Gate cutoff current Drain current Gate to source cutoff voltage Forward transfer admittance Input capacitance Symbol V(BR)GDO V(BR)GSO I GSS I DSS* 1 Min –15 –15 — 5 — 25 — — Typ — — — — — 45 8.5 1.2 Max — — 10 50 –3.0 — — — Unit V V nA mA V mS pF Test conditions I G = –100 µA I G = –100 µA VGS = –7 V, VDS = 0 VDS = 5 V, VGS = 0 VDS = 5 V, ID = 100 µA VDS = 5 V, VGS = 0, f = 1 kHz VDS = 5 V, VGS = 0, f = 1 MHz VGS(off) |yfs| Ciss Noise voltage referred to input en Note: Grade I DSS nV/ √Hz VDS = 5 V, ID = 5 mA, Rg = 0, f = 100 kHz T 36 to 50 1. The 2SK291 is grouped by I DSS as follows. P 5 to 16 Q 14 t...
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