Hitachi 2SK2925
Silicon N-Channel MOSFET
| Part No. | 2SK2925 |
|---|---|
| Datasheet | 2SK2925 Download |
| Manufacturer |  Hitachi |
| Description | Silicon N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance R DS =0.060 Ω typ.● High speed switching
● 4V gate drive device can be driven from 5V source Outline DPAK–2 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2925(L),2SK2925(S)
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 60 ±20 10 40 10 10 8.5 20 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR Pch Tch Tstg 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50Ω 2 2SK2925(L),2SK2925(S)ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min 60 ±20 — — 1.5 — — 5 — — — — — — — — — Typ — — — — — 0.060 0.095 8 350 190 70 10 55 60 70 0.9 50 Max — — ±10 10 2.5 0.080 0.160 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V...
