Datasheet Summary
2SK2925(L),2SK2925(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
- Low on-resistance RDS = 0.060 Ω typ.
- High speed switching
- 4 V gate drive device can be driven from 5 V source
Outline
REJ03G1039-0500 (Previous: ADE-208-454B)
Rev.5.00 Sep 07, 2005
RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-(2))
RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(S))
G 12 3
1. Gate 2. Drain 3. Source 4. Drain
Rev.5.00 Sep 07, 2005 page 1 of 8
2SK2925(L),2SK2925(S)...
