2SK2922
2SK2922 is Silicon N Channel MOS FET manufactured by Hitachi Semiconductor.
Silicon N Channel MOS FET UHF Power Amplifier
ADE-208-675(Z) 1st. Edition Aug. 1998 Features
- High power output, High gain, High efficiency PG = 8.0dB, Pout = 31dBm, ηD = 57 %min. (f = 836.5MHz)
- pact package capable of surface mounting
Outline
UPAK
4 1. Gate 2. Source 3. Drain 4. Source
This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is...
