Part 2SK2922
Description Silicon N Channel MOS FET
Manufacturer Hitachi Semiconductor
Size 36.34 KB
Hitachi Semiconductor
2SK2922

Overview

  • High power output, High gain, High efficiency PG = 8.0dB, Pout = 31dBm, ηD = 57 %min. (f = 836.5MHz)
  • Compact package capable of surface mounting Outline UPAK 3 2 1 4
  • Source
  • Drain
  • Source This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested. 2SK2922