2SK2920 - Silicon N-Channel MOS Type Field Effect Transistor

Toshiba

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2SK2920 silicon n-channel mos type field effect transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SK2920
Manufacturer	Toshiba
File Size	385.90 KB
Description	Silicon N-Channel MOS Type Field Effect Transistor
Datasheet	2SK2920 Datasheet

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2SK2920 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOSV) 2SK2920 Chopper Regulator, DC/DC Converter and Motor Drive Applications z 4 V gate drive z Low drain-source ON-resistance : RDS (ON) = 0.56 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.5 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 200 V) z Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) 6.5 ± 0.2 5.2 ± 0.2 Unit: mm 0.6 MAX. 1.5 ± 0.2 5.5 ± 0.2 9.5 ± 0.3 1.2 MAX. 0.8 MAX. 0.6 ± 0.15 1 1.05 MAX. 23 1.1 ± 0.2 0.6 MAX. 2.3 ± 0.2 0.1 ± 0.