Hitachi 2SK3081
N-Channel MOSFET
| Part No. | 2SK3081 |
|---|---|
| Datasheet | 2SK3081 Download |
| Manufacturer |  Hitachi |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance R DS(on) = 10mΩ typ.● 4V gate drive devices.
● High speed switching Outline TO–220AB D G 1 2 S 3 1. Gate 2. Drain(Flange) 3. Source 2SK3081
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings 30 ±20 45 180 45 Unit V V A A A W °C °C Body-drain diode reverse drain current I DR Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25° C Pch Tch Tstg Note2 75 150 –55 to +150ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min 30 ±20 — — 1.0 — — 20 — — — — — — — — — Typ — — — — — 10 15 30 1570 1100 410 32 300 180 200 1.0 75 Max — — 10 ±10 2.0 14 25 — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF ns ns ns ns V ns I F = 45A, VGS = 0 I F = 45A, VGS = 0 diF/ dt =50A/µs Test Conditions I D = 10mA, VGS = 0 I G = ±100µA, VDS = 0 VDS = 30 V, VGS = 0 VGS = ±16V, VDS = 0 I D = 1mA, VDS = 10...
