Hitachi 2SK3161S
Silicon N-Channel MOSFET
FEATURES
● Low on-resistance R DS = 90 mΩ typ.● High speed switching
● 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK3161(L),2SK3161(S)
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 200 ±20 15 60 15 15 15 75 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR Pch Tch Tstg 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 ΩELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min 200 ±20 — — 1.0 — — 16 — — — — — — — — — Typ — — — — — 90 95 20 1600 510 250 20 120 400 170 0.85 100 Max — — ±10 10 2.5 115 125 — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF ns ns ns ns V ns I F = 15 A, VGS = 0...