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2SK3161S - N-Channel MOSFET

Download the 2SK3161S datasheet PDF. This datasheet also covers the 2SK3161 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low on-resistance RDS =90 mΩ typ.
  • High speed switching.
  • 4 V gate drive device can be driven from 5 V source Outline REJ03G1086-0300 (Previous: ADE-208-734A) Rev.3.00 Sep 07, 2005.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SK3161-Renesas.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
2SK3161S Silicon N-Channel MOSFET Hitachi Semiconductor
2SK3161 Silicon N-Channel MOSFET Hitachi Semiconductor
2SK3161L Silicon N-Channel MOSFET Hitachi Semiconductor
2SK316 N-Channel MOSFET Panasonic Semiconductor
2SK3160 Silicon N-Channel MOSFET Hitachi Semiconductor

Other Datasheets by Renesas

Part Number Description
2SK3161 N-Channel MOSFET
2SK3161L N-Channel MOSFET
2SK3160 N-Channel MOSFET
2SK3162 N-Channel MOSFET
2SK3163 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SK3161(L), 2SK3161(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =90 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline REJ03G1086-0300 (Previous: ADE-208-734A) Rev.3.00 Sep 07, 2005 RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L)) 4 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1)) D 4 G 12 3 123 S 1. Gate 2. Drain 3. Source 4. Drain Rev.3.00 Sep 07, 2005 page 1 of 8 2SK3161 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2.