Datasheet Summary
2SK3161(L), 2SK3161(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
- Low on-resistance RDS =90 mΩ typ.
- High speed switching
- 4 V gate drive device can be driven from 5 V source
Outline
REJ03G1086-0300 (Previous: ADE-208-734A)
Rev.3.00 Sep 07, 2005
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L))
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1))
D 4
12 3
1. Gate 2. Drain 3. Source 4. Drain
Rev.3.00 Sep 07, 2005 page 1 of...
