Datasheet Summary
Silicon N Channel MOS FET High Speed Power Switching
Features
- Low on-resistance RDS = 60 mΩ typ.
- High speed switching
- 4 V gate drive device can be driven from 5 V source
Outline
REJ03G1087-0400 (Previous: ADE-208-735C)
Rev.4.00 Sep 07, 2005
RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM)
G 1. Gate 2. Drain 3. Source
12 3
Rev.4.00 Sep 07, 2005 page 1 of...
