2SK3162 Overview
2SK3162 Silicon N Channel MOS FET High Speed Power Switching.
2SK3162 Key Features
- Low on-resistance RDS = 60 mΩ typ
- High speed switching
- 4 V gate drive device can be driven from 5 V source
| Part number | 2SK3162 |
|---|---|
| Datasheet | 2SK3162-Renesas.pdf |
| File Size | 79.18 KB |
| Manufacturer | Renesas |
| Description | N-Channel MOSFET |
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2SK3162 Silicon N Channel MOS FET High Speed Power Switching.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| 2SK3162 | N-Channel MOSFET | Hitachi Semiconductor |