Datasheet Summary
Silicon N Channel MOS FET High Speed Power Switching
Features
- Low on-resistance RDS(on) = 6 mΩ typ.
- Low drive current
- 4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
1 2 3
REJ03G1088-0300 (Previous: ADE-208-736A)
Rev.3.00 Sep 07, 2005
1. Gate 2. Drain
(Flange) 3. Source
Rev.3.00 Sep 07, 2005 page 1 of...
