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2SK3161(L), 2SK3161(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS =90 mΩ typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source
Outline
REJ03G1086-0300 (Previous: ADE-208-734A)
Rev.3.00 Sep 07, 2005
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L))
4
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1))
D 4
G
12 3
123
S
1. Gate 2. Drain 3. Source 4. Drain
Rev.3.00 Sep 07, 2005 page 1 of 8
2SK3161
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2.
2SK3161 Datasheet
