Hitachi 4AK23
Silicon N-Channel Power MOS FET Array
| Part No. | 4AK23 |
|---|---|
| Datasheet | 4AK23 Download |
| Manufacturer |  Hitachi |
| Description | Silicon N-Channel Power MOS FET Array |
| Buy | Stock & Price |
FEATURES
● Low on-resistance R DS(on) 0.25 , VGS = 10 V, I D = 2.5 A● Low drive current
● High speed switching
● High density mounting
● Suitable for H-bridged motor driver Outline SP-12TA 1 G 2 D 5 G 4 D 8 G 9 D 12 G 11 D 12 3 4 5 6 7 8 9 10 1112 S 3 S 6 S 7 S 10 1, 5, 8, 12. Gate 2, 4, 9, 11. Drain 3, 6, 7, 10. Source 4AK23
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. 4 Devices operation Symbol VDSS VGSS ID I D(pulse)* I DR Pch (Tc = 25°C)* Pch* Tch Tstg 2 2 1 Ratings 100 ±20 5 20 5 32 4 150 –55 to +150 Unit V V A A A W W °C °C 2 4AK23ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 100 ±20 — — 1.0 — — Forward transfer admi...
