Hitachi 4AK25
Silicon N-Channel Power MOS FET Array
| Part No. | 4AK25 |
|---|---|
| Datasheet | 4AK25 Download |
| Manufacturer |  Hitachi |
| Description | Silicon N-Channel Power MOS FET Array |
| Buy | Stock & Price |
FEATURES
● Low on-resistance R DS(on) 0.45 , VGS = 10 V, I D = 1 A● Low drive current
● High speed switching
● High density mounting Outline SP-10 3 D 4 G 2G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1S S 10 1, 10. Source 2, 4, 6, 8. Gate 3, 5, 7, 9. Drain 4AK25
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. 4 Devices operation Symbol VDSS VGSS ID I D(pulse)* I DR Pch (Tc = 25°C)* Pch* Tch Tstg 2 2 1 Ratings 60 ±20 1.5 4.5 1.5 24 3.6 150 –55 to +150 Unit V V A A A W W °C °C 2 4AK25ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 60 ±20 — — 1.0 — — Forward transfer admittance Input capacitance Output capacitance Reverse transfer capa...
