Part BB402M
Description Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Manufacturer Hitachi Semiconductor
Size 64.88 KB
Hitachi Semiconductor
BB402M

Overview

  • Build in Biasing Circuit; To reduce using parts cost & PC board space.
  • Low noise characteristics; (NF = 1.7 dB typ. at f = 200 MHz)
  • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions.
  • Provide mini mold packages; MPAK-4R(SOT-143 var.) Outline MPAK-4R 3 4 2 1
  • Source
  • Drain
  • Gate2
  • Gate1 Notes:
  • Marking is “BX-”.
  • BB402M is individual type number of HITACHI BBFET. BB402M