Datasheet4U Logo Datasheet4U.com

BB402M - Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Features

  • Build in Biasing Circuit; To reduce using parts cost & PC board space.
  • Low noise characteristics; (NF = 1.7 dB typ. at f = 200 MHz).
  • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions.
  • Provide mini mold packages; MPAK-4R(SOT-143 var. ) Outline MPAK-4R 3 4 2 1 1. Source 2. Drain 3. Gate2 4. Gate1 Notes: 1. Marking is “BX.
  • ”. 2. BB402M is individual type number of.

📥 Download Datasheet

Datasheet preview – BB402M

Datasheet Details

Part number BB402M
Manufacturer Hitachi
File Size 64.88 KB
Description Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Datasheet download datasheet BB402M Datasheet
Additional preview pages of the BB402M datasheet.
Other Datasheets by Hitachi

Full PDF Text Transcription

Click to expand full text
BB402M Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-716A (Z) 2nd. Edition Dec. 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.7 dB typ. at f = 200 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions. • Provide mini mold packages; MPAK-4R(SOT-143 var.) Outline MPAK-4R 3 4 2 1 1. Source 2. Drain 3. Gate2 4. Gate1 Notes: 1. Marking is “BX–”. 2. BB402M is individual type number of HITACHI BBFET.
Published: |