BB405M Datasheet Build In Biasing Circuit Mos Fet Ic Uhf/vhf Rf Amplifier

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: BB405M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-718A (Z) 2nd. Edition Dec.

Datasheet Details

Part number	BB405M
Manufacturer	Hitachi Semiconductor (now Renesas)
File Size	59.53 KB
Description	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Datasheet	BB405M_HitachiSemiconductor.pdf

Key Features

Build in Biasing Circuit; To reduce using parts cost & PC board space.
Superior cross modulation characteristics.
High gain; (PG = 28 dB typ. at f = 200 MHz).
Wide supply voltage range; Applicable with 5V to 9V supply voltage.
Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
Provide mini mold packages; MPAK-4R(SOT-143 var. ) Outline MPAK-4R 3 4 2 1 1. Source 2. Drain 3. Gate2 4. Gate1.

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