D1126 Datasheet | Hitachi Semiconductor

2SD1126(K) Silicon NPN Triple Diffused Application Power switching Outline TO-220AB 1 23 1. Base 2. Collector (Flange) 3. Emitter 1 ID 1.5 kΩ (Typ) 130 Ω (Typ) 2SD1126(K) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC - 1 Tj Tstg ID Ratings Unit °C - 55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Collector to emitter breakdown V(BR)CEO 120 - voltage Emitter to base breakdown V(BR)EBO - voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Turn on time Turn off time Note: 1. Pulse test. I CBO I CEO h FE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VD t on t off - - - -...