Hitachi H7N0307AB
Silicon N-Channel MOSFET
| Part No. | H7N0307AB |
|---|---|
| Datasheet | H7N0307AB Download |
| Manufacturer |  Hitachi |
| Description | Silicon N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance● RDS(on) = 4.6 mΩ typ.
● Low drive current
● 4.5 V gate drive device can be driven from 5 V source Outline TO-220AB D G S 1 2 3 1. Gate 2. Drain (Frange) 3. Source H7N0307AB
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel to Case Thermal Impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID ID(pulse) IDR Pch Note 2 Note 1 Ratings 30 ±20 60 240 60 90 1.39 150 –55 to +150 Unit V V A A A W °C/W °C °C θch-c Tch Tstg Rev.1, Aug. 2002, page 2 of 10 H7N0307ABELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min 30 ±20 — — 1.0 — — |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF 40 — — — — — — — — — — — — Typ — — — — — 4.6 8.0 65 2500 650 350 40 7 8 20 300 70 20 0.92 60 Max — — ±10 10 2.5 5.8 11.5 — — — — — — — — — — — — — µA µA V mΩ mΩ S p...
