Renesas Electronics H7N0307LD
Silicon N-Channel MOSFET
| Part No. | H7N0307LD |
|---|---|
| Datasheet | H7N0307LD Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance RDS (on) = 4.6 mΩ typ.● Low drive current
● 4.5 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 123 H7N0307LD RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 4 123 1. Gate 2. Drain 3. Source 4. Drain H7N0307LS RENESAS Package code: PRSS0004AE-C (Package name: LDPAK (S)-(2) ) 4 D G 123 H7N0307LM S Rev.7.00 Apr 07, 2006 page 1 of 7 H7N0307LD, H7N0307LS, H7N0307LM
ABSOLUTE MAXIMUM RATINGS
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel to case thermal impedance Channel to ambient thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C Symbol VDSS VGSS ID ID (pulse) Note 1 IDR Pch Note 2 θ ch-c θ ch-a Tch Tstg Value 30 ±20 60 240 60 90 1.39 89 150 –55 to +150 (Ta = 25°C) Unit V V A A A W °C/W °C/W °C °C...
