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H7N0307LD - Silicon N-Channel MOSFET

Download the H7N0307LD datasheet PDF. This datasheet also covers the H7N0307L variant, as both devices belong to the same silicon n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low on-resistance RDS(on) =4.6 mΩ typ.
  • Low drive current.
  • 4.5 V gate drive device can be driven from 5 V source Outline LDPAK D G S 4 44 1 2 3 1 2 3 H7N0307LS 1 2 3 H7N0307LM H7N0307LD 1. Gate 2. Drain 3. Source 4. Drain H7N0307LD, H7N0307LS, H7N0307LM Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation V DSS V GSS.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (H7N0307L_Hitachi.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
H7N0307LD Silicon N-Channel MOSFET Renesas
H7N0307LM Silicon N-Channel MOSFET Renesas
H7N0307LS Silicon N-Channel MOSFET Renesas
H7N0307AB Silicon N-Channel MOSFET Renesas
H7N0308AB Silicon N-Channel MOSFET Renesas Technology

Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
H7N0307L Silicon N-Channel MOSFET
H7N0307LM Silicon N-Channel MOSFET
H7N0307LS Silicon N-Channel MOSFET
H7N0307AB Silicon N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
H7N0307LD, H7N0307LS, H7N0307LM Silicon N Channel MOS FET High Speed Power Switching ADE-208-1516D (Z) 5th. Edition May 2002 Features • Low on-resistance RDS(on) =4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source Outline LDPAK D G S 4 44 1 2 3 1 2 3 H7N0307LS 1 2 3 H7N0307LM H7N0307LD 1. Gate 2. Drain 3. Source 4. Drain H7N0307LD, H7N0307LS, H7N0307LM Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation V DSS V GSS ID I Note 1 D(pulse) I DR Pch Note 2 Channel to Case Thermal Impedance θch-c Channel to Ambient Thermal Impedance θch-a Channel temperature Tch Storage temperature Tstg Notes: 1.