Hitachi H7N0307LD
Silicon N-Channel MOSFET
| Part No. | H7N0307LD |
|---|---|
| Datasheet | H7N0307LD Download |
| Manufacturer |  Hitachi |
| Description | Silicon N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance RDS(on) =4.6 mΩ typ.● Low drive current
● 4.5 V gate drive device can be driven from 5 V source Outline LDPAK D G S 4 44 1 2 3 1 2 3 H7N0307LS 1 2 3 H7N0307LM H7N0307LD 1. Gate 2. Drain 3. Source 4. Drain H7N0307LD, H7N0307LS, H7N0307LM
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation V DSS V GSS ID I Note 1 D(pulse) I DR Pch Note 2 Channel to Case Thermal Impedance θch-c Channel to Ambient Thermal Impedance θch-a Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Ratings 30 ±20 60 240 60 90 1.39 89 150 –55 to +150 Unit V V A A A W °C/W °C/W °C °C Rev.4, May 2002, page 2 of 11 H7N0307LD, H7N0307LS, H7N0307LMELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero g...
