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H7N0307L - Silicon N-Channel MOSFET

Key Features

  • Low on-resistance RDS(on) =4.6 mΩ typ.
  • Low drive current.
  • 4.5 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 D 4 G 1 S 2 1 2 3 1 2 H7N0307LS 3 3 H7N0307LM 1. Gate 2. Drain 3. Source 4. Drain H7N0307LD H7N0307LD, H7N0307LS, H7N0307LM Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel to Case Therma.

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📁 Similar Datasheet

Part Number Description Manufacturer
H7N0307LD Silicon N-Channel MOSFET Renesas
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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
H7N0307LD Silicon N-Channel MOSFET
H7N0307LM Silicon N-Channel MOSFET
H7N0307LS Silicon N-Channel MOSFET
H7N0307AB Silicon N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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H7N0307LD, H7N0307LS, H7N0307LM Silicon N Channel MOS FET High Speed Power Switching ADE-208-1516D (Z) 5th. Edition May 2002 Features • Low on-resistance RDS(on) =4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 D 4 G 1 S 2 1 2 3 1 2 H7N0307LS 3 3 H7N0307LM 1. Gate 2. Drain 3. Source 4. Drain H7N0307LD H7N0307LD, H7N0307LS, H7N0307LM Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel to Case Thermal Impedance Channel to Ambient Thermal Impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2.