Hitachi HAF2001
Silicon N Channel MOS FET Series Power Switching
| Part No. | HAF2001 |
|---|---|
| Datasheet | HAF2001 Download |
| Manufacturer |  Hitachi |
| Description | Silicon N Channel MOS FET Series Power Switching |
| Buy | Stock & Price |
FEATURES
This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.● Logic level operation (4 to 6 V Gate drive)
● High endurance capability against to the short circuit
● Built–in the over temperature shut–down circuit
● Latch type shut–down operation (Need 0 voltage recovery) Outline TO–220AB D 4 G Gate resistor Tempe– rature Sencing Circuit Latch Circuit Gate Shut– down Circuit 1 2 S 3 1. Gate 2. Drain 3. Source 4. Drain HAF2001
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Ta = 25...
