Hitachi HAF2005
Silicon N Channel MOS FET Series Power Switching
| Part No. | HAF2005 |
|---|---|
| Datasheet | HAF2005 Download |
| Manufacturer |  Hitachi |
| Description | Silicon N Channel MOS FET Series Power Switching |
| Buy | Stock & Price |
FEATURES
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● Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built–in the over temperature shut–down circuit Latch type shut–down operation (Need 0 voltage recovery) Outline TO–220FM D G Gate resistor Tempe– rature Sencing Circuit Latch Circuit Gate Shut– down Circuit 1 2 S 3 1. Gate 2. Drain 3. Source HAF2005
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Ta = 25°C Symbol VDSS VGSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings 60 (16) (–2.5) 40 80 40 30 150 –55 to +150 Unit V V V A A A W °C °C Typical Operation Characteristics Item Input voltage Symbol VIH VIL Input current (Gate non shut down) I IH1 I IH2 I IL Input current (Gate non shut down) I IH(sd)1 I IH(sd)2 Min 3.5 — —...
